Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

R Ishihara; J Zhang; M Trifunovic; J Derakhshandeh Kheljani; N Golshani; MR Tajari Mofrad; T Chen; CIM Beenakker; T Shimoda

doi:10.1587/transele.E97.C.227

Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

R Ishihara, J Zhang, M Trifunovic, J Derakhshandeh Kheljani, N Golshani, MR Tajari Mofrad, T Chen, CIM Beenakker, T Shimoda

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Pages (from-to)	227-237
Number of pages	11
Journal	IEICE Transactions on Electronics
Volume	E97-C
Issue number	4
DOIs	https://doi.org/10.1587/transele.E97.C.227
Publication status	Published - 2014

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Harvest

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10.1587/transele.E97.C.227

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title = "Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics",

author = "R Ishihara and J Zhang and M Trifunovic and {Derakhshandeh Kheljani}, J and N Golshani and {Tajari Mofrad}, MR and T Chen and CIM Beenakker and T Shimoda",

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language = "English",

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pages = "227--237",

journal = "IEICE Transactions on Electronics",

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T1 - Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

AU - Ishihara, R

AU - Zhang, J

AU - Trifunovic, M

AU - Derakhshandeh Kheljani, J

AU - Golshani, N

AU - Tajari Mofrad, MR

AU - Chen, T

AU - Beenakker, CIM

AU - Shimoda, T

N1 - Harvest

PY - 2014

Y1 - 2014

UR - http://resolver.tudelft.nl/uuid:7f2eb1e2-3ea4-4ee7-a8cc-e9136bc3134b

U2 - 10.1587/transele.E97.C.227

DO - 10.1587/transele.E97.C.227

M3 - Article

SN - 0916-8524

VL - E97-C

SP - 227

EP - 237

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 4

ER -

Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

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