Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon

Marta Kluba, Aslihan Arslan, Ronald Stoute, James Muganda, Ronald Dekker

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Abstract

This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be etched in a silicon substrate through a mesh mask. In the same single etching step, multidimensional microchannels with various dimensions (width, length, and depth) can be obtained by tuning the process and design parameters. These fully embedded structures enable further wafer processing and integration of electronic components like sensors and actuators in wafers with microchannels.
Original languageEnglish
Title of host publicationProceedings of Eurosensors 2017
Pages1-4
Number of pages4
DOIs
Publication statusPublished - 2017
EventEurosensors 2017: 31st Conference - Paris, France
Duration: 3 Sep 20176 Sep 2017
Conference number: 31
http://www.eurosensors2017.eu/

Publication series

NameProceedings
PublisherMDPI
Number4
Volume1
ISSN (Print)2504-3900

Conference

ConferenceEurosensors 2017
CountryFrance
CityParis
Period3/09/176/09/17
Internet address

Keywords

  • embedded microchannel
  • HAR
  • mesh mask
  • single-step DRIE (Bosch process)

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