Solid-phase crystallization of ultra high growth rate amorphous silicon films

K Sharma, MV Ponomarev, MA Verheijen, O Kunz, FD Tichelaar, M van de Sanden, M Creatore

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)


    In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (similar to 1.5 mu m) polycrystalline silicon was obtained after SPC of high growth rate (similar to 25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. (C)
    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    JournalJournal of Applied Physics
    Issue number10
    Publication statusPublished - 2012

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