Solid-phase epitaxial growth of (III)-oriented Si film on InGaO3(ZnO)5 buffer layer

T Chen, MY Wu, R Ishihara, K Nomura, T Kamiya, H Hosono, CIM Beenakker

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	2010
DOIs	https://doi.org/10.1007/s10854-010-0237-1
Publication status	Published - 2010

Keywords

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title = "Solid-phase epitaxial growth of (III)-oriented Si film on InGaO3(ZnO)5 buffer layer",

keywords = "CWTS JFIS < 0.75",

author = "T Chen and MY Wu and R Ishihara and K Nomura and T Kamiya and H Hosono and CIM Beenakker",

note = "http://www.springerlink.com/content/f881294m76n42684/",

year = "2010",

doi = "10.1007/s10854-010-0237-1",

language = "English",

volume = "2010",

pages = "1--4",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer",

}

TY - JOUR

T1 - Solid-phase epitaxial growth of (III)-oriented Si film on InGaO3(ZnO)5 buffer layer

AU - Chen, T

AU - Wu, MY

AU - Ishihara, R

AU - Nomura, K

AU - Kamiya, T

AU - Hosono, H

AU - Beenakker, CIM

N1 - http://www.springerlink.com/content/f881294m76n42684/

PY - 2010

Y1 - 2010

KW - CWTS JFIS < 0.75

U2 - 10.1007/s10854-010-0237-1

DO - 10.1007/s10854-010-0237-1

M3 - Article

VL - 2010

SP - 1

EP - 4

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

ER -