Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

Paolo Sberna, Miki Trifunovic, Ryoichi Ishihara

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
33 Downloads (Pure)


Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
Original languageEnglish
Pages (from-to)5642-5645
JournalACS Sustainable Chemistry and Engineering
Issue number7
Publication statusPublished - 11 Jun 2017


  • Disilane byproduct
  • Byproduct recycle
  • Polysilane
  • Low-temperature fabrication
  • Thin-film transistor
  • Polycrystalline silicon
  • Solution processing

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