Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C

M Trifunovic; J Zhang; M van der Zwan; R Ishihara

doi:10.1109/IEDM.2014.7047114

Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C

M Trifunovic, J Zhang, M van der Zwan, R Ishihara

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	Proceedings 2014 International Electron Devices Meeting - Technical Digest
Editors	HC-H Wang, J Suehle, P Fay
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Print)	978-1-4799-8000-0
DOIs	https://doi.org/10.1109/IEDM.2014.7047114
Publication status	Published - 2014
Event	IEDM 2014, San Francisco, CA, USA - Piscataway, NJ, USA Duration: 15 Dec 2014 → 17 Dec 2014

Publication series

Name
Publisher	IEEE

Conference

Conference	IEDM 2014, San Francisco, CA, USA
Period	15/12/14 → 17/12/14

Access to Document

10.1109/IEDM.2014.7047114

Cite this

@inproceedings{50aeb50dd4a94a97a9b374bf30008f3d,

title = "Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C",

author = "M Trifunovic and J Zhang and {van der Zwan}, M and R Ishihara",

year = "2014",

doi = "10.1109/IEDM.2014.7047114",

language = "English",

isbn = "978-1-4799-8000-0",

publisher = "IEEE",

pages = "1--4",

editor = "HC-H Wang and J Suehle and P Fay",

booktitle = "Proceedings 2014 International Electron Devices Meeting - Technical Digest",

address = "United States",

note = "IEDM 2014, San Francisco, CA, USA ; Conference date: 15-12-2014 Through 17-12-2014",

}

Trifunovic, M, Zhang, J, van der Zwan, M & Ishihara, R 2014, Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C. in HC-H Wang, J Suehle & P Fay (eds), Proceedings 2014 International Electron Devices Meeting - Technical Digest. IEEE, Piscataway, NJ, USA, pp. 1-4, IEDM 2014, San Francisco, CA, USA, 15/12/14. https://doi.org/10.1109/IEDM.2014.7047114

Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C. / Trifunovic, M; Zhang, J; van der Zwan, M et al.
Proceedings 2014 International Electron Devices Meeting - Technical Digest. ed. / HC-H Wang; J Suehle; P Fay. Piscataway, NJ, USA: IEEE, 2014. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C

AU - Trifunovic, M

AU - Zhang, J

AU - van der Zwan, M

AU - Ishihara, R

PY - 2014

Y1 - 2014

U2 - 10.1109/IEDM.2014.7047114

DO - 10.1109/IEDM.2014.7047114

M3 - Conference contribution

SN - 978-1-4799-8000-0

SP - 1

EP - 4

BT - Proceedings 2014 International Electron Devices Meeting - Technical Digest

A2 - Wang, HC-H

A2 - Suehle, J

A2 - Fay, P

PB - IEEE

CY - Piscataway, NJ, USA

T2 - IEDM 2014, San Francisco, CA, USA

Y2 - 15 December 2014 through 17 December 2014

ER -