Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits

L. Petit, J. M. Boter, H. G.J. Eenink, G. Droulers, M. L.V. Tagliaferri, R. Li, D. P. Franke, K. J. Singh, J. S. Clarke, R. N. Schouten, V. V. Dobrovitski, L. M.K. Vandersypen, M. Veldhorst

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.

Original languageEnglish
Article number076801
Pages (from-to)1-5
JournalPhysical Review Letters
Volume121
Issue number7
DOIs
Publication statusPublished - 14 Aug 2018

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