Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J.A. Beukman, Folkert K. De Vries, Jasper Van Veen, Rafal Skolasinski, Michael Wimmer, Fanming Qu, David T. De Vries, Binh Minh Nguyen, Leo P. Kouwenhoven

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)
28 Downloads (Pure)

Abstract

The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

Original languageEnglish
Article number241401
Number of pages5
JournalPhysical Review B
Volume96
Issue number24
DOIs
Publication statusPublished - 2017

Fingerprint Dive into the research topics of 'Spin-orbit interaction in a dual gated InAs/GaSb quantum well'. Together they form a unique fingerprint.

Cite this