Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J.A. Beukman, Folkert K. De Vries, Jasper Van Veen, Rafal Skolasinski, Michael Wimmer, Fanming Qu, David T. De Vries, Binh Minh Nguyen, Leo P. Kouwenhoven*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

25 Citations (Scopus)
80 Downloads (Pure)

Abstract

The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

Original languageEnglish
Article number241401
Number of pages5
JournalPhysical Review B
Volume96
Issue number24
DOIs
Publication statusPublished - 2017

Fingerprint

Dive into the research topics of 'Spin-orbit interaction in a dual gated InAs/GaSb quantum well'. Together they form a unique fingerprint.

Cite this