Stability, geometry and electronic properties of BHn (n = 0 to 3) radicals on the Si{0 0 1}3 1:H surface from first-principles

C. M. Fang*, V. Mohammodi, S. Nihtianov, M. H.F. Sluiter

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
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