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Stability, geometry and electronic properties of BHn (n = 0 to 3) radicals on the Si{0 0 1}3 1:H surface from first-principles
C. M. Fang*, V. Mohammodi, S. Nihtianov, M. H.F. Sluiter
*Corresponding author for this work
Research output: Contribution to journal › Article › Scientific › peer-review
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