Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu; Nergiz Sahin Solmaz; Sadik Ilik; Yasemin Uzun; Mustafa Berke Yelten

doi:10.1109/TED.2018.2877942

Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu^*, Nergiz Sahin Solmaz, Sadik Ilik, Yasemin Uzun, Mustafa Berke Yelten

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

21 Citations (Scopus)

Abstract

Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I_D-V_GS and I_D-V_DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

Original language	English
Article number	8550668
Pages (from-to)	66-72
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2877942
Publication status	Published - 2019
Externally published	Yes

Keywords

BSIM modeling
cryogenic
cryogenic variation
device modeling
low temperature
MOSFET modeling
statistical modeling

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10.1109/TED.2018.2877942

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title = "Statistical MOSFET Modeling Methodology for Cryogenic Conditions",

abstract = "Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.",

keywords = "BSIM modeling, cryogenic, cryogenic variation, device modeling, low temperature, MOSFET modeling, statistical modeling",

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AU - Solmaz, Nergiz Sahin

AU - Ilik, Sadik

AU - Uzun, Yasemin

AU - Yelten, Mustafa Berke

PY - 2019

Y1 - 2019

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AB - Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

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Statistical MOSFET Modeling Methodology for Cryogenic Conditions

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