Strained single grain silicon n- and p- channel thin-film transistors by excimer laser

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Original language	English
Pages (from-to)	308-310
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	4
DOIs	https://doi.org/10.1109/LED.2010.2040131
Publication status	Published - 2010

Keywords

@article{119c2eed6c9e4be1a09113ba22f6a920,

title = "Strained single grain silicon n- and p- channel thin-film transistors by excimer laser",

keywords = "Elektrotechniek, Techniek, CWTS JFIS >= 2.00",

author = "A Baiano and R Ishihara and {van der Cingel}, J and CIM Beenakker",

year = "2010",

doi = "10.1109/LED.2010.2040131",

language = "English",

volume = "31",

pages = "308--310",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "4",

}

TY - JOUR

T1 - Strained single grain silicon n- and p- channel thin-film transistors by excimer laser

AU - Baiano, A

AU - Ishihara, R

AU - van der Cingel, J

AU - Beenakker, CIM

PY - 2010

Y1 - 2010

KW - Elektrotechniek

KW - Techniek

KW - CWTS JFIS >= 2.00

U2 - 10.1109/LED.2010.2040131

DO - 10.1109/LED.2010.2040131

M3 - Article

SN - 0741-3106

VL - 31

SP - 308

EP - 310

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -