Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells

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Abstract

Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical parameters as compared to the one featuring only MoOx and to the silicon heterojunction reference cell. Optical simulations and experimentally measured currents suggest that the additional PT is responsible of very limited parasitic absorption overcompensated by the thinner MoOx used (3.5 nm) and by the lower losses in the (i)a-Si:H layer underneath.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages405-407
Number of pages3
ISBN (Electronic)9781728161150
DOIs
Publication statusPublished - 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period15/06/2021/08/20

Keywords

  • (i)a-Si:H/MoOx solar cells
  • Dipole layer
  • Enhanced stability

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