Strong doping reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation

K. Dockx; M. D. Barnes; D. J. Wehenkel; R. van Rijn; H. S.J. van der Zant; M. Buscema

doi:10.1088/1361-6528/ad5dbb

Strong doping reduction on wafer-scale CVD graphene devices via Al₂O₃ ALD encapsulation

K. Dockx^*, M. D. Barnes, D. J. Wehenkel, R. van Rijn, H. S.J. van der Zant^*, M. Buscema^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al₂O₃ encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V cnp , from around +47 V to between −5 and 5 V (on 285 nm SiO₂), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.

Original language	English
Article number	395202
Journal	Nanotechnology
Volume	35
Issue number	39
DOIs	https://doi.org/10.1088/1361-6528/ad5dbb
Publication status	Published - 2024

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

atomic layer deposition
electronics
graphene

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10.1088/1361-6528/ad5dbb

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title = "Strong doping reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation",

abstract = "We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V cnp , from around +47 V to between −5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.",

keywords = "atomic layer deposition, electronics, graphene",

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doi = "10.1088/1361-6528/ad5dbb",

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AU - Barnes, M. D.

AU - Wehenkel, D. J.

AU - van Rijn, R.

AU - van der Zant, H. S.J.

AU - Buscema, M.

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2024

Y1 - 2024

N2 - We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V cnp , from around +47 V to between −5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.

AB - We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V cnp , from around +47 V to between −5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.

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DO - 10.1088/1361-6528/ad5dbb

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JO - Nanotechnology

JF - Nanotechnology

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ER -

Strong doping reduction on wafer-scale CVD graphene devices via Al₂O₃ ALD encapsulation

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