Structural and electrical properties of metastable defects in hydrogenated amorphous silicon

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Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	91
Issue number	245207
DOIs	https://doi.org/10.1103/PhysRevB.91.245207
Publication status	Published - 2015

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@article{58cc56d20468422cb412e38a3e3766a9,

title = "Structural and electrical properties of metastable defects in hydrogenated amorphous silicon",

author = "J Melskens and A. Schnegg and A. Baldansuren and K Lips and M.P. Plokker and SWH Eijt and H Schut and M Fischer and M Zeman and AHM Smets",

year = "2015",

doi = "10.1103/PhysRevB.91.245207",

language = "English",

volume = "91",

pages = "1--6",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "1098-0121",

publisher = "American Physical Society",

number = "245207",

}

TY - JOUR

T1 - Structural and electrical properties of metastable defects in hydrogenated amorphous silicon

AU - Melskens, J

AU - Schnegg, A.

AU - Baldansuren, A.

AU - Lips, K

AU - Plokker, M.P.

AU - Eijt, SWH

AU - Schut, H

AU - Fischer, M

AU - Zeman, M

AU - Smets, AHM

PY - 2015

Y1 - 2015

U2 - 10.1103/PhysRevB.91.245207

DO - 10.1103/PhysRevB.91.245207

M3 - Article

SN - 1098-0121

VL - 91

SP - 1

EP - 6

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 245207

ER -