Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

S Haffouz, A Grzegorczyk, PR Hageman, P Vennégues, EWJM van der Drift, PK Larsen

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{69726b4aa95e4d26b92fba5c2fb21452,

title = "Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "S Haffouz and A Grzegorczyk and PR Hageman and P Venn{\'e}gues and {van der Drift}, EWJM and PK Larsen",

year = "2003",

language = "Undefined/Unknown",

volume = "248",

pages = "568--572",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

AU - Haffouz, S

AU - Grzegorczyk, A

AU - Hageman, PR

AU - Vennégues, P

AU - van der Drift, EWJM

AU - Larsen, PK

PY - 2003

Y1 - 2003

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

VL - 248

SP - 568

EP - 572

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -