Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

S Haffouz, A Grzegorczyk, PR Hageman, P Vennégues, EWJM van der Drift, PK Larsen

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)568-572
Number of pages5
JournalJournal of Crystal Growth
Volume248
Publication statusPublished - 2003

Keywords

  • academic journal papers
  • ZX CWTS 1.00 <= JFIS < 3.00

Cite this