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Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Research output: Contribution to journalArticleScientificpeer-review

Original languageUndefined/Unknown
Pages (from-to)568-572
Number of pages5
JournalJournal of Crystal Growth
Volume248
Publication statusPublished - 2003

Keywords

  • academic journal papers
  • ZX CWTS 1.00 <= JFIS < 3.00

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