Structuring Interdigitated Back Contact Solar Cells Using the Enhanced Oxidation Characteristics Under Laser-Doped Back Surface Field Regions

Vaibhav V. Kuruganti*, Olindo Isabella, Valentin D. Mihailetchi

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer-based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser-doped n++ back surface field (BSF) regions with high-phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl3 diffusion serve as a precursor layer for the formation of local heavily laser-doped n++ BSF regions. The laser-doped n++ BSF regions exhibit a 2.6-fold increase in oxide thickness compared to the nonlaser-doped n+ BSF regions after undergoing high-temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser-doped and nonlaser-doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof-of-concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%.

Original languageEnglish
Article number2300820
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume221
Issue number5
DOIs
Publication statusPublished - 2024

Funding

This work was funded by the German Federal Ministry for Economic Affairs and Energy within the research project “RALPH” (contract no. 03EE1018C).

Keywords

  • interdigitated back contact solar cells
  • laser doping
  • patterning techniques
  • SiO as diffusion barriers

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