Study of boron-doped nm-deep junctions fabricated by B2H6 surface reaction doping

F Sarubbi, LK Nanver, TLM Scholtes

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	SAFE 2007 Semiconductor advances for future electornics
Editors	s.n.
Place of Publication	s.l.
Publisher	STW
Pages	1-4
Number of pages	4
Publication status	Published - 2007

Name
Publisher	STW

Keywords

@inproceedings{42e54b11aa70450f979c0b19c9f73a59,

title = "Study of boron-doped nm-deep junctions fabricated by B2H6 surface reaction doping",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Vakpubl., Overig wet. > 3 pag",

author = "F Sarubbi and LK Nanver and TLM Scholtes",

year = "2007",

language = "Undefined/Unknown",

publisher = "STW",

pages = "1--4",

editor = "s.n.",

booktitle = "SAFE 2007 Semiconductor advances for future electornics",

}

TY - GEN

T1 - Study of boron-doped nm-deep junctions fabricated by B2H6 surface reaction doping

AU - Sarubbi, F

AU - Nanver, LK

AU - Scholtes, TLM

PY - 2007

Y1 - 2007

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Vakpubl., Overig wet. > 3 pag

M3 - Conference contribution

SP - 1

EP - 4

BT - SAFE 2007 Semiconductor advances for future electornics

A2 - s.n., null

PB - STW

CY - s.l.

ER -