Study of boron-doped nm-deep junctions fabricated by B2H6 surface reaction doping

F Sarubbi, LK Nanver, TLM Scholtes

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Original languageUndefined/Unknown
Title of host publicationSAFE 2007 Semiconductor advances for future electornics
Editors s.n.
Place of Publications.l.
PublisherSTW
Pages1-4
Number of pages4
Publication statusPublished - 2007

Publication series

Name
PublisherSTW

Keywords

  • Elektrotechniek
  • Techniek
  • conference contrib. refereed
  • Vakpubl., Overig wet. > 3 pag

Cite this

Sarubbi, F., Nanver, LK., & Scholtes, TLM. (2007). Study of boron-doped nm-deep junctions fabricated by B2H6 surface reaction doping. In s.n. (Ed.), SAFE 2007 Semiconductor advances for future electornics (pp. 1-4). STW.