Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

Ke  Liu; Wucheng  Yuan; Shaogang  Wang; Chunjian Tan; Huaiyu Ye

doi:10.1109/ICEPT56209.2022.9873376

Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

Ke Liu, Wucheng Yuan, Shaogang Wang, Chunjian Tan, Huaiyu Ye

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

16 Downloads (Pure)

Abstract

In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper half of the P-pillar. In the reverse recovery test of the proposed bubble-shift SJ-MOSFET, the peak reverse recovery current (I rrm ) is reduced from 16.04 A to 15.21 A, and the current drop rate (di/dt) is reduced from 1587 A/μs to 815 A/μs. Correspondingly, the proposed device achieves a better reverse recovery characteristic while sacrificing a small fraction of the drain-source breakdown voltage (BV) and drain-source special on-resistance (R on,sp ). Compared with the BV of 700 V and the R on,sp of 9 mΩ·cm 2 of the benchmark SJ-MOSFET. The proposed device has a BV of 650 V and a R on,sp of 12.4 mΩ·cm 2 . Mechanistically, the non-uniform depletion of the curved P-pillar reduces the carrier extraction rate, thereby prolonging the reverse current drop time (t f ) and increasing the softness factor (S) of the bubble-shift SJ-MOSFET.

Original language	English
Title of host publication	Proceedings of the 2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-6654-9905-7
ISBN (Print)	978-1-6654-9906-4
DOIs	https://doi.org/10.1109/ICEPT56209.2022.9873376
Publication status	Published - 2022
Event	2022 23rd International Conference on Electronic Packaging Technology (ICEPT) - Dalian, China Duration: 10 Aug 2022 → 13 Aug 2022 Conference number: 23rd

Conference

Conference	2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
Country/Territory	China
City	Dalian
Period	10/08/22 → 13/08/22

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

super junction
reverse recovery
P-pillar
bubbleshift
TCAD

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10.1109/ICEPT56209.2022.9873376

Study_on_Reverse_Recovery_of_a_P-pillar_Tunable_Super-Junction_MOSFETFinal published version, 1.92 MB

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@inproceedings{5b98065c806949338f9e147edb367f80,

title = "Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*",

abstract = "In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper half of the P-pillar. In the reverse recovery test of the proposed bubble-shift SJ-MOSFET, the peak reverse recovery current (I rrm ) is reduced from 16.04 A to 15.21 A, and the current drop rate (di/dt) is reduced from 1587 A/μs to 815 A/μs. Correspondingly, the proposed device achieves a better reverse recovery characteristic while sacrificing a small fraction of the drain-source breakdown voltage (BV) and drain-source special on-resistance (R on,sp ). Compared with the BV of 700 V and the R on,sp of 9 mΩ·cm 2 of the benchmark SJ-MOSFET. The proposed device has a BV of 650 V and a R on,sp of 12.4 mΩ·cm 2 . Mechanistically, the non-uniform depletion of the curved P-pillar reduces the carrier extraction rate, thereby prolonging the reverse current drop time (t f ) and increasing the softness factor (S) of the bubble-shift SJ-MOSFET.",

keywords = "super junction, reverse recovery, P-pillar, bubbleshift, TCAD",

author = "Ke Liu and Wucheng Yuan and Shaogang Wang and Chunjian Tan and Huaiyu Ye",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) ; Conference date: 10-08-2022 Through 13-08-2022",

year = "2022",

doi = "10.1109/ICEPT56209.2022.9873376",

language = "English",

isbn = "978-1-6654-9906-4",

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booktitle = "Proceedings of the 2022 23rd International Conference on Electronic Packaging Technology (ICEPT)",

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}

Liu, K, Yuan, W, Wang, S, Tan, C & Ye, H 2022, Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*. in Proceedings of the 2022 23rd International Conference on Electronic Packaging Technology (ICEPT). IEEE, pp. 1-4, 2022 23rd International Conference on Electronic Packaging Technology (ICEPT), Dalian, China, 10/08/22. https://doi.org/10.1109/ICEPT56209.2022.9873376

TY - GEN

T1 - Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

AU - Liu, Ke

AU - Yuan, Wucheng

AU - Wang, Shaogang

AU - Tan, Chunjian

AU - Ye, Huaiyu

N1 - Conference code: 23rd

PY - 2022

Y1 - 2022

N2 - In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper half of the P-pillar. In the reverse recovery test of the proposed bubble-shift SJ-MOSFET, the peak reverse recovery current (I rrm ) is reduced from 16.04 A to 15.21 A, and the current drop rate (di/dt) is reduced from 1587 A/μs to 815 A/μs. Correspondingly, the proposed device achieves a better reverse recovery characteristic while sacrificing a small fraction of the drain-source breakdown voltage (BV) and drain-source special on-resistance (R on,sp ). Compared with the BV of 700 V and the R on,sp of 9 mΩ·cm 2 of the benchmark SJ-MOSFET. The proposed device has a BV of 650 V and a R on,sp of 12.4 mΩ·cm 2 . Mechanistically, the non-uniform depletion of the curved P-pillar reduces the carrier extraction rate, thereby prolonging the reverse current drop time (t f ) and increasing the softness factor (S) of the bubble-shift SJ-MOSFET.

AB - In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper half of the P-pillar. In the reverse recovery test of the proposed bubble-shift SJ-MOSFET, the peak reverse recovery current (I rrm ) is reduced from 16.04 A to 15.21 A, and the current drop rate (di/dt) is reduced from 1587 A/μs to 815 A/μs. Correspondingly, the proposed device achieves a better reverse recovery characteristic while sacrificing a small fraction of the drain-source breakdown voltage (BV) and drain-source special on-resistance (R on,sp ). Compared with the BV of 700 V and the R on,sp of 9 mΩ·cm 2 of the benchmark SJ-MOSFET. The proposed device has a BV of 650 V and a R on,sp of 12.4 mΩ·cm 2 . Mechanistically, the non-uniform depletion of the curved P-pillar reduces the carrier extraction rate, thereby prolonging the reverse current drop time (t f ) and increasing the softness factor (S) of the bubble-shift SJ-MOSFET.

KW - super junction

KW - reverse recovery

KW - P-pillar

KW - bubbleshift

KW - TCAD

UR - http://www.scopus.com/inward/record.url?scp=85139125645&partnerID=8YFLogxK

U2 - 10.1109/ICEPT56209.2022.9873376

DO - 10.1109/ICEPT56209.2022.9873376

M3 - Conference contribution

SN - 978-1-6654-9906-4

SP - 1

EP - 4

BT - Proceedings of the 2022 23rd International Conference on Electronic Packaging Technology (ICEPT)

PB - IEEE

T2 - 2022 23rd International Conference on Electronic Packaging Technology (ICEPT)

Y2 - 10 August 2022 through 13 August 2022

ER -

Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

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