Studying tunability of some NIR semiconductor lasers by external cavity setup

Mohammad Amin Bani, Majid Nazeri, Hamed Abbasi

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

In this paper, tunability of three near-infrared semiconductor lasers which typically lase at 808 nm, 892 nm and 980 nm is studied. Both Littrow (wavelength dependent beam direction setup) and Littman (wavelength independent beam direction setup) configurations have been used. The wavelength and the power of the output beam of the laser have been measured. In all three cases, Littrow configuration shows a little better tuning range. In both Littrow and Littman configurations the wavelengths near the main wavelength of the laser had more power. The highest achieved power of these lasers in the Littrow setup was more than that of the Littman setup.

Original languageEnglish
Title of host publicationThird International Conference on Applications of Optics and Photonics
EditorsManuel F. M. Costa
PublisherSPIE
ISBN (Electronic)9781510613836
DOIs
Publication statusPublished - 2017
Externally publishedYes
Event3rd Triennial International Conference on Applications of Optics and Photonics - Faro, Portugal
Duration: 8 May 201712 May 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10453
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference3rd Triennial International Conference on Applications of Optics and Photonics
Country/TerritoryPortugal
CityFaro
Period8/05/1712/05/17

Keywords

  • External cavity
  • Littman configuration
  • Littrow configuration
  • Near IR
  • Semiconductor laser
  • Tunability

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