Superconducting Microstrip Losses at Microwave and Submillimeter Wavelengths

We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and submillimeter wavelengths. The microstrips are fabricated from Nb-Ti-N, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Submillimeter wave losses are measured using on-chip Fabry-Perot resonators (FPRs) operating around 350 GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tan⁡δ=3.7±0.5×10-5 at approximately 6GHz and tan⁡δ=2.1±0.1×10-4 at 350 GHz. These results represent very low losses for deposited dielectrics, but the submillimeter wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.