Surface morphology of c-plane sapphire (alpha-alumina) prouced by high termperature anneal

F Cuccureddu, S Murphy, IV Shvets, M Porcu, HW Zandbergen, NS Sidorov, SI Bozhko

    Research output: Contribution to journalArticleScientificpeer-review

    42 Citations (Scopus)

    Abstract

    A comparative study of the morphological surface evolution of c-plane (0001) alpha-Al2O3 upon annealing was investigated for non-miscut (i.e. substrates with 0 degrees nominal miscut) and vicinal substrates. The samples were annealed in air at 1100 degrees C for different durations of time. Although non-miscut samples do not show any step bunching at this temperature, miscut substrates show a regular and ordered stepped morphology with clearly defined terraces as revealed by Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) image analysis. The surface morphology presents a number of coalescence points, i.e. locations where two steps merge and form a multiple step. Close to the coalescence points, parallel steps change direction to different low index direction.
    Original languageEnglish
    Pages (from-to)1294-12999
    Number of pages11706
    JournalSurface Science
    Volume604
    Issue number15-16
    DOIs
    Publication statusPublished - 2010

    Keywords

    • academic journal papers
    • CWTS JFIS < 0.75

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