Surface passivation of n -type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

B.W.H. van de Loo, A. Ingenito, M. A. Verheijen, O. Isabella, M. Zeman, W. M.M. Kessels

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Original languageEnglish
Article number263106
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Volume110
Issue number26
DOIs
Publication statusPublished - 2017

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