Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

Jianwen Sun; Teng Zhan; Zewen Liu; Junxi Wang; Xiaoyan  Yi; Pasqualina M. Sarro; Guoqi Zhang

doi:10.1364/OE.27.036405

Suspended tungsten trioxide (WO₃) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

Jianwen Sun, Teng Zhan, Zewen Liu, Junxi Wang, Xiaoyan Yi, Pasqualina M. Sarro, Guoqi Zhang

Electronic Components, Technology and Materials

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Abstract

A suspended WO₃-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO₃-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.

Original language	English
Pages (from-to)	36405-36413
Number of pages	9
Journal	Optics Express
Volume	27
Issue number	25
DOIs	https://doi.org/10.1364/OE.27.036405
Publication status	Published - 2019

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title = "Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater",

abstract = "A suspended WO3-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO3-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.",

author = "Jianwen Sun and Teng Zhan and Zewen Liu and Junxi Wang and Xiaoyan Yi and Sarro, {Pasqualina M.} and Guoqi Zhang",

year = "2019",

doi = "10.1364/OE.27.036405",

language = "English",

volume = "27",

pages = "36405--36413",

journal = "Optics Express",

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T1 - Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

AU - Sun, Jianwen

AU - Zhan, Teng

AU - Liu, Zewen

AU - Wang, Junxi

AU - Yi, Xiaoyan

AU - Sarro, Pasqualina M.

AU - Zhang, Guoqi

PY - 2019

Y1 - 2019

N2 - A suspended WO3-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO3-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.

AB - A suspended WO3-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO3-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.

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U2 - 10.1364/OE.27.036405

DO - 10.1364/OE.27.036405

M3 - Article

AN - SCOPUS:85076441945

SN - 1094-4087

VL - 27

SP - 36405

EP - 36413

JO - Optics Express

JF - Optics Express

IS - 25

ER -

Suspended tungsten trioxide (WO₃) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

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