System NEP Verification of a Wideband THz Direct Detector in CMOS

S.L. van Berkel; E.S. Malotaux; C. de Martino; M. Spirito; D. Cavallo; A. Neto; N. Llombart

doi:10.1109/IRMMW-THz46771.2020.9370624

System NEP Verification of a Wideband THz Direct Detector in CMOS

S.L. van Berkel, E.S. Malotaux, C. de Martino, M. Spirito, D. Cavallo, A. Neto, N. Llombart

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

The predicted Noise Equivalent Power (NEP) of a THz direct detector is validated by means of a noise- and a system responsivity measurement. The direct detector consists of a double leaky slot lens antenna that operates from 200 GHz to 600 GHz in combination with a differential pair of Schottky Barrier Diodes (SBDs). The model is derived from low-frequency measurements.

Original language	English
Title of host publication	2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Pages	72
Number of pages	1
ISBN (Electronic)	978-1-7281-6620-9
DOIs	https://doi.org/10.1109/IRMMW-THz46771.2020.9370624
Publication status	Published - 2020

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2020-November
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

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10.1109/IRMMW-THz46771.2020.9370624

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van Berkel, S. L., Malotaux, E. S., de Martino, C., Spirito, M., Cavallo, D., Neto, A., & Llombart, N. (2020). System NEP Verification of a Wideband THz Direct Detector in CMOS. In 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 (pp. 72). Article 9370624 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2020-November). https://doi.org/10.1109/IRMMW-THz46771.2020.9370624

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title = "System NEP Verification of a Wideband THz Direct Detector in CMOS",

abstract = "The predicted Noise Equivalent Power (NEP) of a THz direct detector is validated by means of a noise- and a system responsivity measurement. The direct detector consists of a double leaky slot lens antenna that operates from 200 GHz to 600 GHz in combination with a differential pair of Schottky Barrier Diodes (SBDs). The model is derived from low-frequency measurements.",

author = "{van Berkel}, S.L. and E.S. Malotaux and {de Martino}, C. and M. Spirito and D. Cavallo and A. Neto and N. Llombart",

year = "2020",

doi = "10.1109/IRMMW-THz46771.2020.9370624",

language = "English",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

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van Berkel, SL, Malotaux, ES, de Martino, C , Spirito, M , Cavallo, D , Neto, A & Llombart, N 2020, System NEP Verification of a Wideband THz Direct Detector in CMOS. in 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020., 9370624, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2020-November, pp. 72. https://doi.org/10.1109/IRMMW-THz46771.2020.9370624

System NEP Verification of a Wideband THz Direct Detector in CMOS. / van Berkel, S.L.; Malotaux, E.S.; de Martino, C. et al.
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020. 2020. p. 72 9370624 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2020-November).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - System NEP Verification of a Wideband THz Direct Detector in CMOS

AU - van Berkel, S.L.

AU - Malotaux, E.S.

AU - de Martino, C.

AU - Spirito, M.

AU - Cavallo, D.

AU - Neto, A.

AU - Llombart, N.

PY - 2020

Y1 - 2020

N2 - The predicted Noise Equivalent Power (NEP) of a THz direct detector is validated by means of a noise- and a system responsivity measurement. The direct detector consists of a double leaky slot lens antenna that operates from 200 GHz to 600 GHz in combination with a differential pair of Schottky Barrier Diodes (SBDs). The model is derived from low-frequency measurements.

AB - The predicted Noise Equivalent Power (NEP) of a THz direct detector is validated by means of a noise- and a system responsivity measurement. The direct detector consists of a double leaky slot lens antenna that operates from 200 GHz to 600 GHz in combination with a differential pair of Schottky Barrier Diodes (SBDs). The model is derived from low-frequency measurements.

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U2 - 10.1109/IRMMW-THz46771.2020.9370624

DO - 10.1109/IRMMW-THz46771.2020.9370624

M3 - Conference contribution

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

SP - 72

BT - 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020

ER -

van Berkel SL, Malotaux ES, de Martino C , Spirito M , Cavallo D , Neto A et al. System NEP Verification of a Wideband THz Direct Detector in CMOS. In 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020. 2020. p. 72. 9370624. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz46771.2020.9370624

System NEP Verification of a Wideband THz Direct Detector in CMOS

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