This work adapts a model to simulate the carrier injection dependent minority carrier lifetime of crystalline silicon passivated with hydrogenated amorphous silicon at elevated temperatures. Two existing models that respectively calculate the bulk lifetime and surface recombination velocity are used and the full temperature dependency of these models are explored. After a thorough description of these temperature dependencies, experimental results using this model show that the minority carrier lifetime changes upon annealing of silicon heterojunction structures are not universal. Furthermore, comparisons of the temperature dependent model to using the room temperature model at elevated temperatures is given and significant differences are observed when using temperatures above 100 °C. This shows the necessity of taking temperature effects into account during in-situ annealing experiments.