INIS
charges
100%
comparative evaluations
10%
conversion
10%
design
10%
dynamics
10%
gain
10%
images
100%
metals
20%
noise
100%
oxides
20%
range
10%
readout systems
100%
sampling
100%
semiconductor materials
20%
sensors
100%
signals
20%
simulation
10%
steady-state conditions
10%
time dependence
10%
topology
10%
Engineering
Analysis Method
20%
Analysis Theory
20%
Characteristics
20%
Complementary Metal-Oxide-Semiconductor
40%
Conversion Gain
20%
Design Parameter
20%
Experimental Result
20%
Function of Time
20%
Good Agreement
20%
Image Sensor
100%
Linear Analysis
20%
Models
60%
Prototype
20%
Readout Circuit
100%
Signal Model
20%
Simulation Result
20%
Statistical Property
20%
Time Domain
20%
Physics
Behavior
25%
Independent Variables
25%
Metal Oxide Semiconductor
50%