Abstract
The search for alternative memory technologies has attracted significant attention toward emerging non-volatile memories. Among them, STT-MRAM, PCM, RRAM have shown promising characteristic to gain a position inside the memory hierarchy of computing platforms, and even enable new computing paradigms. However like any other emerging technology these devices are affected by concerns to be resolved before they could become a mainstream. This paper reviews the main reliability and testability challenges of aforementioned emerging non-volatile memories and highlights the main future considerations toward them.
Original language | English |
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Title of host publication | 2017 IEEE 26th Asian Test Symposium (ATS) |
Editors | L. O’Conner |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 170-178 |
Number of pages | 9 |
ISBN (Electronic) | 978-1-5386-2437-1 |
ISBN (Print) | 978-1-5386-3516-2 |
DOIs | |
Publication status | Published - 2017 |
Event | IEEE 26th Asian Test Symposium : ATS - Taipei City, Taiwan Duration: 27 Nov 2017 → 30 Nov 2017 |
Conference
Conference | IEEE 26th Asian Test Symposium |
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Country/Territory | Taiwan |
City | Taipei City |
Period | 27/11/17 → 30/11/17 |
Keywords
- STT-MRAM
- PCM
- RRAM
- Test
- Reliability