TFET NDR Skewed Inverter based Sensing Method

Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Sorin Cotofana, Costin Anghel

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Many of CMOS SRAMs (like 8T-SRAMs), DRAMs, non-volatile memories and TFET SRAMs use single ended read. Optimization of such sensing schemes is critical. Conventional single ended sensing requires either full discharge of bitline (BL) or voltage/current reference in order to use differential sense amplifier. There is speed and/or power penalty because of either full discharge of BL or complex sense amplifier using references. In this paper, a TFET negative differential resistance property based skewed inverter single-ended read scheme has been proposed. This sensing scheme detects read with less than 200mV BL discharge with inverter based sensing. This results in simplified single ended scheme with speed and BL discharge similar to differential sensing schemes. Less than 400ps read delay is achieved for 200mV BL discharge at 1V supply.

Original languageEnglish
Title of host publication2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
EditorsW. Zhao, C.A. Moritz
Place of PublicationNew York
PublisherAssociation for Computing Machinery (ACM)
Pages13-14
Number of pages2
ISBN (Electronic)978-1-4503-4330-5
ISBN (Print)978-1-4673-8927-3
Publication statusPublished - 2016
Event2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) - Beijing, China
Duration: 18 Jul 201620 Jul 2016

Conference

Conference2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
Abbreviated titleNANOARCH 2016
CountryChina
CityBeijing
Period18/07/1620/07/16

Keywords

  • TFETs
  • Sensors
  • Inverters
  • Discharges (electric)
  • Random access memory
  • Power demand
  • Delays

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