The boost transistor: A field plate controlled LDMOST

A Ferrara; BK Heringa; J Boksteen; A Claes; J van der Wel; R Schmitz; JE Hueting; PG Steeneken

The boost transistor: A field plate controlled LDMOST

A Ferrara, BK Heringa, J Boksteen, A Claes, J van der Wel, R Schmitz, JE Hueting, PG Steeneken

QN/Steeneken Lab

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Title of host publication	Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015
Editors	G Ghione
Place of Publication	Piscataway
Publisher	The Inst. of Electrical and Electrical Engineers
Pages	165-168
Number of pages	4
ISBN (Print)	9781479962624
Publication status	Published - 2015

Publication series

Name
Publisher	The Inst. of Electrical and Electrical Engineers

Cite this

@inproceedings{ca6cf0717f7543ebb5f4e823b3e1cc34,

title = "The boost transistor: A field plate controlled LDMOST",

author = "A Ferrara and BK Heringa and J Boksteen and A Claes and {van der Wel}, J and R Schmitz and JE Hueting and PG Steeneken",

year = "2015",

language = "English",

isbn = "9781479962624",

publisher = "The Inst. of Electrical and Electrical Engineers",

pages = "165--168",

editor = "G Ghione",

booktitle = "Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015",

}

The boost transistor: A field plate controlled LDMOST. / Ferrara, A; Heringa, BK; Boksteen, J et al.
Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015. ed. / G Ghione. Piscataway: The Inst. of Electrical and Electrical Engineers, 2015. p. 165-168.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - The boost transistor: A field plate controlled LDMOST

AU - Ferrara, A

AU - Heringa, BK

AU - Boksteen, J

AU - Claes, A

AU - van der Wel, J

AU - Schmitz, R

AU - Hueting, JE

AU - Steeneken, PG

PY - 2015

Y1 - 2015

M3 - Conference contribution

SN - 9781479962624

SP - 165

EP - 168

BT - Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015

A2 - Ghione, G

PB - The Inst. of Electrical and Electrical Engineers

CY - Piscataway

ER -