The chemical-mechanical relationship of the SiOC(H) dielectric film

CA Yuan, O van der Sluis, GQ Zhang, LJ Ernst, WD van Driel, RBR van Silfhout, BJ Thijsse

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review


We propose an atomic simulation technique to understand the chemical-mechanical relationship of amorphous/porous silica based low-dielectric (low-k) material (SiOC(H)). The mechanical stiffness of the low-k material is a critical issue for the reliability performance of the IC backend structures. Due to the amorphous nature of the low-k material which has till now unknown molecular structure, a novel algorithm is required to generate the molecular structure. The molecular dynamics (MD) method is used as the simulation tool. Moreover, to understand the variation of the mechanical stiffness and density by the chemical configuration, sensitivity analyses have been performed. A fitting equation based on homogenization theory is established to represent the MD simulation results. The trends which are indicated by the simulation results exhibit good agreements with experiments from literature. Moreover, the simulation results indicate that the slight variation of the chemical configuration can induce significant change of the mechanical stiffness (over 80%) but not the density.
Original languageUndefined/Unknown
Title of host publicationEuroSimE 2007
EditorsLJ Ernst
Place of PublicationLondon
Number of pages6
ISBN (Print)1-4244-1105-X
Publication statusPublished - 2007
EventEuroSimE 2007 - London
Duration: 16 Apr 200718 Apr 2007


ConferenceEuroSimE 2007


  • conference contrib. refereed
  • Conf.proc. > 3 pag

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