The dielectric function of Mgy NiHx thin films (2 ≤ y ≤ 10)

W. Lohstroh*, R. J. Westerwaal, J. L.M. van Mechelen, H. Schreuders, B. Dam, R. Griessen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)

Abstract

Mgy Ni (2 ≤ y ≤ 10) thin films covered with a Pd cap layer are hydrogenated in 1 05 Pa H2 between room temperature and 80 ° C and their dielectric function over(ε, ̃) is determined from reflection and transmission measurements. The hydrogenated Mgy NiHx thin films show a continuous shift of the optical absorption towards higher photon energies with increasing y. Comparison of the obtained dielectric functions with predictions from an effective medium theory show that a considerable doping of the Mg2 NiH4 host takes place at least for y ≤ 3.5 while no signature of MgH2 is observed in that composition range in the optical spectra. This is in contrast to the predictions from the bulk phase diagram where a mixture of semiconducting Mg2 NiH4 (energy gap Eg = 1.6 eV) and MgH2 (Eg = 5.6 eV) is expected.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalJournal of Alloys and Compounds
Volume430
Issue number1-2
DOIs
Publication statusPublished - 2007
Externally publishedYes

Keywords

  • Hydrogen storage
  • Light absorption and reflection
  • Thin films

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