The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

CEC Dam, AP Grzegorczyk, PR Hageman, R Dorsman, CR Kleijn, PK Larsen

    Research output: Contribution to journalArticleScientificpeer-review

    44 Citations (Scopus)
    Original languageUndefined/Unknown
    Pages (from-to)192-199
    Number of pages8
    JournalJournal of Crystal Growth
    Volume271
    Issue number1-2
    Publication statusPublished - 2004

    Keywords

    • ZX CWTS 1.00 <= JFIS < 3.00

    Cite this