The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

CEC Dam, AP Grzegorczyk, PR Hageman, R Dorsman, CR Kleijn, PK Larsen

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{5d3d531c8c144e6a88e8168fd35f22cc,

title = "The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations",

keywords = "ZX CWTS 1.00 <= JFIS < 3.00",

author = "CEC Dam and AP Grzegorczyk and PR Hageman and R Dorsman and CR Kleijn and PK Larsen",

year = "2004",

language = "Undefined/Unknown",

volume = "271",

pages = "192--199",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

AU - Dam, CEC

AU - Grzegorczyk, AP

AU - Hageman, PR

AU - Dorsman, R

AU - Kleijn, CR

AU - Larsen, PK

PY - 2004

Y1 - 2004

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 0022-0248

VL - 271

SP - 192

EP - 199

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -