The effect of the contact window edges on the perimeter currents of shallow junction diodes

V Gonda; TLM Scholtes; LK Nanver

The effect of the contact window edges on the perimeter currents of shallow junction diodes

V Gonda, TLM Scholtes, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005)
Editors	s.n.
Place of Publication	Utrecht, The Netherlands
Publisher	Dutch Technology Foundation
Pages	88-91
Number of pages	4
ISBN (Print)	90-73461-50-2
Publication status	Published - 2005
Event	STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005), Veldhoven, the Netherlands - Utrecht Duration: 17 Nov 2005 → 18 Nov 2005

Publication series

Name
Publisher	Dutch Technology Foundation

Conference

Conference	STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005), Veldhoven, the Netherlands
Period	17/11/05 → 18/11/05

Bibliographical note

Editors onbekend, WPM/STW

Keywords

Elektrotechniek
Techniek
conference contrib. refereed
Vakpubl., Overig wet. > 3 pag

Cite this

@inproceedings{50136a1e4b8c4743aae6b621bda5ce8d,

title = "The effect of the contact window edges on the perimeter currents of shallow junction diodes",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Vakpubl., Overig wet. > 3 pag",

author = "V Gonda and TLM Scholtes and LK Nanver",

note = "Editors onbekend, WPM/STW; STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005), Veldhoven, the Netherlands ; Conference date: 17-11-2005 Through 18-11-2005",

year = "2005",

language = "Undefined/Unknown",

isbn = "90-73461-50-2",

publisher = "Dutch Technology Foundation",

pages = "88--91",

editor = "s.n.",

booktitle = "Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005)",

}

Gonda, V, Scholtes, TLM & Nanver, LK 2005, The effect of the contact window edges on the perimeter currents of shallow junction diodes. in s.n. (ed.), Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005). Dutch Technology Foundation, Utrecht, The Netherlands, pp. 88-91, STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005), Veldhoven, the Netherlands, 17/11/05.

The effect of the contact window edges on the perimeter currents of shallow junction diodes. / Gonda, V; Scholtes, TLM; Nanver, LK.
Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005). ed. / s.n. Utrecht, The Netherlands: Dutch Technology Foundation, 2005. p. 88-91.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - The effect of the contact window edges on the perimeter currents of shallow junction diodes

AU - Gonda, V

AU - Scholtes, TLM

AU - Nanver, LK

N1 - Editors onbekend, WPM/STW

PY - 2005

Y1 - 2005

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Vakpubl., Overig wet. > 3 pag

M3 - Conference contribution

SN - 90-73461-50-2

SP - 88

EP - 91

BT - Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005)

A2 - s.n., null

PB - Dutch Technology Foundation

CY - Utrecht, The Netherlands

T2 - STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005), Veldhoven, the Netherlands

Y2 - 17 November 2005 through 18 November 2005

ER -