The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

L Zimmermann, JMM de Nijs, PFA Alkemade, K Westerduin, AM van Veen

Research output: Contribution to journal › Article › Scientific › peer-review

ISSN: 00036951

Cite this

@article{1c5445e9047a47da8b507c177432d9c1,

title = "The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide",

author = "L Zimmermann and {de Nijs}, JMM and PFA Alkemade and K Westerduin and {van Veen}, AM",

note = "ISSN: 00036951",

year = "1998",

language = "Undefined/Unknown",

volume = "73",

pages = "774--777",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

AU - Zimmermann, L

AU - de Nijs, JMM

AU - Alkemade, PFA

AU - Westerduin, K

AU - van Veen, AM

N1 - ISSN: 00036951

PY - 1998

Y1 - 1998

M3 - Article

SN - 0003-6951

VL - 73

SP - 774

EP - 777

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -