TY - JOUR
T1 - The hole picture as alternative for the common electron picture to describe hole trapping and luminescence quenching
AU - Dorenbos, Pieter
N1 - Accepted Author Manuscript
PY - 2018
Y1 - 2018
N2 - Electronic level schemes with the host valence and conduction band together with the level locations of ground and excited states of defects are used to explain and predict luminescence and carrier trapping phenomena. These schemes are always constructed and interpreted by using the electron picture. In this work the alternative hole picture is presented. Such picture is sometimes used in the field of semi-conductors but hardly ever in the field of wide band gap inorganic compounds. We will focus on the lanthanides, and first show where to draw the hole ground state and excited hole states in our scheme. It leads to up-side-down Dieke diagrams and up-side-down configuration coordinate diagrams but for the rest everything is equivalent to the electron picture. With the hole picture, luminescence quenching via hole ionization to the valence band and hole trapping in defects can be illustrated much more conveniently than with the electron picture. As examples the quenching of the Tb3+ D45 emissions by electron ionization and the quenching of the Eu3+ D05 emissions by hole ionization are compared.
AB - Electronic level schemes with the host valence and conduction band together with the level locations of ground and excited states of defects are used to explain and predict luminescence and carrier trapping phenomena. These schemes are always constructed and interpreted by using the electron picture. In this work the alternative hole picture is presented. Such picture is sometimes used in the field of semi-conductors but hardly ever in the field of wide band gap inorganic compounds. We will focus on the lanthanides, and first show where to draw the hole ground state and excited hole states in our scheme. It leads to up-side-down Dieke diagrams and up-side-down configuration coordinate diagrams but for the rest everything is equivalent to the electron picture. With the hole picture, luminescence quenching via hole ionization to the valence band and hole trapping in defects can be illustrated much more conveniently than with the electron picture. As examples the quenching of the Tb3+ D45 emissions by electron ionization and the quenching of the Eu3+ D05 emissions by hole ionization are compared.
UR - http://resolver.tudelft.nl/uuid:0c159619-c61f-4181-8e19-add5ae5ae7b6
UR - http://www.scopus.com/inward/record.url?scp=85041473461&partnerID=8YFLogxK
U2 - 10.1016/j.jlumin.2018.01.013
DO - 10.1016/j.jlumin.2018.01.013
M3 - Article
AN - SCOPUS:85041473461
SN - 0022-2313
VL - 197
SP - 62
EP - 65
JO - Journal of Luminescence
JF - Journal of Luminescence
ER -