INIS
transistors
100%
electron mobility
100%
detection
100%
sensors
100%
gallium nitrides
100%
depth
100%
increasing
50%
devices
50%
afm
25%
precision
25%
power
25%
voltage
25%
high temperature
25%
variations
25%
hydrogen
25%
comparative evaluations
25%
recovery
25%
etching
25%
signals
25%
gases
25%
Engineering
Sensor
100%
Transistor
100%
Detection
100%
Electric Power Utilization
25%
Response Time
25%
Measurement
25%
Hydrogen Gas
25%
High Temperature
25%
Transients
25%
Recovery Time
25%
Voltage
25%
Shallower
25%
Earth and Planetary Sciences
Impact
100%
High Electron Mobility Transistors
100%
Depth
100%
Increasing
50%
Threshold Voltage
25%
High Temperature
25%
Gas
25%
Hydrogen
25%
Precision
25%
Report
25%
Variation
25%
Material Science
Electron Mobility
100%
Devices
100%
Transistor
100%
Temperature
50%
Energy-Dispersive X-Ray Spectroscopy
50%
Gas
50%
Keyphrases
Gate Recess
100%
Cyclic Etching
25%
Deep Recess
25%
Recessed Gate Structure
25%
Hydrogen Gas Sensor
25%
Chemical Engineering
Hydrogen
100%
Temperature
100%