The influence of strain relaxation on the electrical properties of Si/SiGe resonant tunneling diodes.

WP Lukey, J Caro, T Zijlstra, EWJM van der Drift, S Radelaar

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	27-35
Number of pages	9
Journal	Analog Integrated Circuits and Signal Processing
Volume	24
Issue number	1
Publication status	Published - 2000

Keywords

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title = "The influence of strain relaxation on the electrical properties of Si/SiGe resonant tunneling diodes.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "WP Lukey and J Caro and T Zijlstra and {van der Drift}, EWJM and S Radelaar",

year = "2000",

language = "Undefined/Unknown",

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journal = "Analog Integrated Circuits and Signal Processing",

issn = "0925-1030",

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}

TY - JOUR

T1 - The influence of strain relaxation on the electrical properties of Si/SiGe resonant tunneling diodes.

AU - Lukey, WP

AU - Caro, J

AU - Zijlstra, T

AU - van der Drift, EWJM

AU - Radelaar, S

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 0925-1030

VL - 24

SP - 27

EP - 35

JO - Analog Integrated Circuits and Signal Processing

JF - Analog Integrated Circuits and Signal Processing

IS - 1

ER -