The influence of strain relaxation on the electrical properties of Si/SiGe resonant tunneling diodes.

WP Lukey, J Caro, T Zijlstra, EWJM van der Drift, S Radelaar

Research output: Contribution to journalArticleScientificpeer-review

Original languageUndefined/Unknown
Pages (from-to)27-35
Number of pages9
JournalAnalog Integrated Circuits and Signal Processing
Issue number1
Publication statusPublished - 2000


  • ZX Int.klas.verslagjaar < 2002

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