The mechanical influence of the porosity and nano-scale pore size effect of the SiOC(H) dielectric film

CA Yuan, AE Flower, O van der Sluis, GQ Zhang, LJ Ernst, M Cherkaoui, WD van Driel

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientific

Abstract

We propose a molecular modeling method which is capable of modeling the mechanical impact of the porosity and pore size to the amorphous silicon-based low-dielectric (low-k) material. Due to the electronic requirement of advanced electronic devices, low-k materials are in demand for the IC backend structure. However, due to the amorphous nature and porosity of this material, it exhibits low mechanical stiffness and low interfacial strength, as well as inducing numerous reliability issues. The mechanical impact of the nano-scaled pore, including the porosity ratio and pore size, is simulated using molecular dynamics on the mechanical stiffness and interfacial strength. A fitting function is formulated based on the continuum homogenous theory and atomic interaction in nano-scale. The simulation results are fitted into analytical equations based on the homogenous theory.
Original languageUndefined/Unknown
Title of host publicationProceedings of the 9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems
Editors Ernst, L.J., Zhang, G.Q., Driel, W.D. van, Rodgers, P., Saint Leger, O. de
Place of PublicationFreiburg-im-Breisgau
PublisherEuroSimE
Pages199-203
Number of pages5
ISBN (Print)978-1-4244-2127-5
Publication statusPublished - 2008
Event9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems - Freiburg-im-Breisgau
Duration: 21 Apr 200823 Apr 2008

Publication series

Name
PublisherEuroSimE

Conference

Conference9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems
Period21/04/0823/04/08

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

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