The performance of sintered nanocopper interconnections for high temperature device

Qipeng Liu, Xianping Chen, Jie Zhu, HuanKun Zhang, Jiang Song Zhang, Jing Guo Zhang, LiGen Wang, Huaiyu Ye, Sau Wee Koh, G.O. Zhang

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

3 Citations (Scopus)

Abstract

IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.

Original languageEnglish
Title of host publicationProceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
Editors F. Xiao, J. Wang, L. Chen, T. Ye
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1476-1478
Number of pages3
ISBN (Electronic)978-1-5386-6386-8
DOIs
Publication statusPublished - 2018
EventICEPT 2018: 19th International Conference on Electronic Packaging Technology - Shanghai, China
Duration: 8 Aug 201811 Aug 2018
Conference number: 19

Conference

ConferenceICEPT 2018
CountryChina
CityShanghai
Period8/08/1811/08/18

Keywords

  • die attach
  • Nanocopper
  • paste
  • Power device

Fingerprint Dive into the research topics of 'The performance of sintered nanocopper interconnections for high temperature device'. Together they form a unique fingerprint.

Cite this