The saturation current of silicon bipolar transistors at moderate stress levels and its relation to the energy-band structure

JF Creemer, PJ French

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)4530-4538
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number8
Publication statusPublished - 2004

Keywords

  • academic journal papers
  • ZX CWTS 1.00 <= JFIS < 3.00

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