The saturation current of silicon bipolar transistors at moderate stress levels and its relation to the energy-band structure

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Keywords

@article{f86dc984f9c04243ad952ffc46729377,

title = "The saturation current of silicon bipolar transistors at moderate stress levels and its relation to the energy-band structure",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "JF Creemer and PJ French",

year = "2004",

language = "Undefined/Unknown",

volume = "96",

pages = "4530--4538",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "8",

}

TY - JOUR

T1 - The saturation current of silicon bipolar transistors at moderate stress levels and its relation to the energy-band structure

AU - Creemer, JF

AU - French, PJ

PY - 2004

Y1 - 2004

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 0021-8979

VL - 96

SP - 4530

EP - 4538

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -