The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

AHM Smets; CR Wronski; M Zeman; MCM van de Sanden

doi:doi:10.1557/PROC-1245-A14-02

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

AHM Smets, CR Wronski, M Zeman, MCM van de Sanden

Photovoltaic Materials and Devices

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

23 Citations (Scopus)

Abstract

In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

Original language	English
Title of host publication	Amorphous and polycrystalline thin-film silicon science and technology 2010
Editors	Q Wang, B Yan, S Higashi, CC Tsai, A Flewitt
Place of Publication	Warrendale, USA
Publisher	MRS
Pages	1-6
Number of pages	6
DOIs	https://doi.org/doi:10.1557/PROC-1245-A14-02
Publication status	Published - 2010
Event	MRS 2010, Materials Research Society, San Francisco, CA, USA - Warrendale, USA Duration: 5 Apr 2010 → 9 Apr 2010

Publication series

Name
Publisher	MRS

Name
Volume	1245

Conference

Conference	MRS 2010, Materials Research Society, San Francisco, CA, USA
Period	5/04/10 → 9/04/10

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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doi:10.1557/PROC-1245-A14-02

Cite this

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title = "The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin",

abstract = "In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "AHM Smets and CR Wronski and M Zeman and {van de Sanden}, MCM",

year = "2010",

doi = "doi:10.1557/PROC-1245-A14-02",

language = "English",

publisher = "MRS",

pages = "1--6",

editor = "Q Wang and B Yan and S Higashi and CC Tsai and A Flewitt",

booktitle = "Amorphous and polycrystalline thin-film silicon science and technology 2010",

note = "MRS 2010, Materials Research Society, San Francisco, CA, USA ; Conference date: 05-04-2010 Through 09-04-2010",

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Smets, AHM, Wronski, CR, Zeman, M & van de Sanden, MCM 2010, The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin. in Q Wang, B Yan, S Higashi, CC Tsai & A Flewitt (eds), Amorphous and polycrystalline thin-film silicon science and technology 2010. MRS, Warrendale, USA, pp. 1-6, MRS 2010, Materials Research Society, San Francisco, CA, USA, 5/04/10. https://doi.org/doi:10.1557/PROC-1245-A14-02

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin. / Smets, AHM; Wronski, CR; Zeman, M et al.
Amorphous and polycrystalline thin-film silicon science and technology 2010. ed. / Q Wang; B Yan; S Higashi; CC Tsai; A Flewitt. Warrendale, USA: MRS, 2010. p. 1-6.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

AU - Smets, AHM

AU - Wronski, CR

AU - Zeman, M

AU - van de Sanden, MCM

PY - 2010

Y1 - 2010

N2 - In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

AB - In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

U2 - doi:10.1557/PROC-1245-A14-02

DO - doi:10.1557/PROC-1245-A14-02

M3 - Conference contribution

SP - 1

EP - 6

BT - Amorphous and polycrystalline thin-film silicon science and technology 2010

A2 - Wang, Q

A2 - Yan, B

A2 - Higashi, S

A2 - Tsai, CC

A2 - Flewitt, A

PB - MRS

CY - Warrendale, USA

T2 - MRS 2010, Materials Research Society, San Francisco, CA, USA

Y2 - 5 April 2010 through 9 April 2010

ER -

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

Abstract

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Keywords

UN SDGs

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