The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

AHM Smets, CR Wronski, M Zeman, MCM van de Sanden

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

21 Citations (Scopus)

Abstract

In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.
Original languageEnglish
Title of host publicationAmorphous and polycrystalline thin-film silicon science and technology 2010
EditorsQ Wang, B Yan, S Higashi, CC Tsai, A Flewitt
Place of PublicationWarrendale, USA
PublisherMRS
Pages1-6
Number of pages6
DOIs
Publication statusPublished - 2010
EventMRS 2010, Materials Research Society, San Francisco, CA, USA - Warrendale, USA
Duration: 5 Apr 20109 Apr 2010

Publication series

Name
PublisherMRS
Name
Volume1245

Conference

ConferenceMRS 2010, Materials Research Society, San Francisco, CA, USA
Period5/04/109/04/10

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

Fingerprint Dive into the research topics of 'The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin'. Together they form a unique fingerprint.

Cite this