The uniformity of APCVD SiGe layers with high Ge concentration

J Shi; K Grimm; LK Nanver; CCG Visser; A van den Boogaard

The uniformity of APCVD SiGe layers with high Ge concentration

J Shi, K Grimm, LK Nanver, CCG Visser, A van den Boogaard

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	Proceedings
Place of Publication	S.l.
Publisher	American Mathematical Society
Pages	-
Publication status	Published - 1998
Event	1st International Epsilon Users' Group Meeting on Silicon-Germanium and Low Temperature Epitaxy, Amsterdam - S.l. Duration: 18 Jun 1998 → 18 Jun 1998

Publication series

Name
Publisher	American Mathematical Society

Conference

Conference	1st International Epsilon Users' Group Meeting on Silicon-Germanium and Low Temperature Epitaxy, Amsterdam
Period	18/06/98 → 18/06/98

Keywords

ZX Int.klas.verslagjaar < 2002

Cite this

@inproceedings{dbd910e19f0b47b3b6c24fcd75992f38,

title = "The uniformity of APCVD SiGe layers with high Ge concentration",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "J Shi and K Grimm and LK Nanver and CCG Visser and {van den Boogaard}, A",

year = "1998",

language = "Undefined/Unknown",

publisher = "American Mathematical Society",

pages = "--",

booktitle = "Proceedings",

address = "United States",

note = "1st International Epsilon Users' Group Meeting on Silicon-Germanium and Low Temperature Epitaxy, Amsterdam ; Conference date: 18-06-1998 Through 18-06-1998",

}

TY - GEN

T1 - The uniformity of APCVD SiGe layers with high Ge concentration

AU - Shi, J

AU - Grimm, K

AU - Nanver, LK

AU - Visser, CCG

AU - van den Boogaard, A

PY - 1998

Y1 - 1998

KW - ZX Int.klas.verslagjaar < 2002

M3 - Conference contribution

SP - -

BT - Proceedings

PB - American Mathematical Society

CY - S.l.

T2 - 1st International Epsilon Users' Group Meeting on Silicon-Germanium and Low Temperature Epitaxy, Amsterdam

Y2 - 18 June 1998 through 18 June 1998

ER -