Thermal annealing of C ion irradiation defects in nuclear graphite studied by positron annihilation

C. Q. Shi, H. Schut, Z. C. Li

Research output: Contribution to journalConference articleScientificpeer-review

5 Citations (Scopus)
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Abstract

In order to investigate the thermal behaviour of radiation induced point defects in nuclear graphite, ETU10 graphite was implanted with 350 keV C+ ion to doses of 1015 and 1016 cm-2. The point defects introduced by the implantation were characterized by Positron Annihilation Doppler Broadening (PADB) and their thermal behaviour was studied during "in situ" annealing at Delft Variable Energy Positron beam (VEP). The annealing was performed for 5 minutes at temperatures ranging from 300 K (as implanted) to 1500 K in steps of 100 K. For both doses, an annealing stage at around 450 K is observed followed by a second stage around 700 K. For the high dose implantation vacancy complexes are found which are stable up to a temperature around 1400K.

Original languageEnglish
Article number012019
Number of pages6
JournalJournal of Physics: Conference Series
Volume674
Issue number1
DOIs
Publication statusPublished - 26 Jan 2016

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