Thermal inductance in GaN devices

Huaiyu Ye, Stanley Y.Y. Leung, Cell K.Y. Wong, Xianping Chen, Kai Lin, Jiajie Fan, Signe Kjelstrup, Xuejun Fan, Guoqi Zhang

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
36 Downloads (Pure)


Using the analogue of the electric inductance, we reveal the properties of the thermal inductance in GaN-based light-emitting diode devices by testing their transient thermal behaviors. We find that the devices exhibit a transient thermal response under step-down or step-up currents and observe notable inductive phenomena of the temperature response as time evolves from start up to some hundred microseconds. We define thermal inductance as the rapid change in device temperature that is opposite to the temperature change expected from the power input. These findings can promote new temperature measurements, and novel thermal analyses of high-frequency semiconductor devices that combining the thermal resistances, thermal capacitances, and thermal inductances.

Original languageEnglish
Article number7572880
Pages (from-to)1473-1476
Number of pages4
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2016

Bibliographical note

Accepted author manuscript


  • Thermal analysis
  • Thermal inductance
  • Transient thermal behaviour


Dive into the research topics of 'Thermal inductance in GaN devices'. Together they form a unique fingerprint.

Cite this