Thermal Management on IGBT Power Electronic Devices and Modules

Cheng Qian, Amir Mirza Gheytaghi, Jiajie Fan, Hongyu Tang, Bo Sun, Huaiyu Ye, GuoQi Zhang

Research output: Contribution to journalArticleScientificpeer-review

99 Citations (Scopus)
1274 Downloads (Pure)

Abstract

As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this paper, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing, and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models, and thermal network models, respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.
Original languageEnglish
Pages (from-to)12868-12884
Number of pages16
JournalIEEE Access
Volume6
DOIs
Publication statusPublished - 2018

Keywords

  • Power electronics
  • IGBT
  • thermal management
  • cooling
  • qualifications
  • OA-Fund TU Delft

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