Thermal-mechanical-electrical Co-design of Fan-Out Panel-Level SiC MOSFET Packaging with a Multi-objective Optimization Algorithm

Wei Chen, Xuyang Yan, Mesfin S. Ibrahim, Abdulmelik H. Meda, Xuejun Fan, Guoqi Zhang, Jiajie Fan*

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)
23 Downloads (Pure)

Abstract

As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this challenge, this study proposes a multi-objective optimization design method for parasitic inductance (L), thermal strain (?), and thermal resistance (R) of SiC MOSFETs with Fan-Out Panel-Level Packaging (FOPLP). First, the orthogonal experimental design was employed to investigate the thickness effects of baseplate, solder, die and redistribution layer (RDL) on L, e, and R. Then, the multi-objective optimization was developed to simultaneously reduce L, G, and R. Finally the fatigue lifetimes of the optimized and initial SiC MOSFET FOPLP structures were compared to verify the optimization's accuracy. Study findings include: (1) Solder thickness was the most significant influence factor for L, e and R of SiC MOSFET FOPLP, L and R increased, and e decreased with increasing solder thickness; (2) The proposed multi-objective optimization method coupled with a genetic algorithm achieved 14.79, 8.96, and 9.28% reduction of L, e, and R, respectively; (3) The fatigue lifetime of solder (SAC305) was evaluated using the Coffin-Manson model, with predicted lifetimes before and after optimization being 6786 and 7085 cycles, respectively, demonstrating that the proposed approach significantly enhanced the designed SiC MOSFET FOPLP's long-term thermal cycling reliability.

Original languageEnglish
Title of host publicationProceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023
PublisherIEEE
Pages2007-2011
Number of pages5
ISBN (Electronic)9798350334982
DOIs
Publication statusPublished - 2023
Event73rd IEEE Electronic Components and Technology Conference, ECTC 2023 - Orlando, United States
Duration: 30 May 20232 Jun 2023

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2023-May
ISSN (Print)0569-5503

Conference

Conference73rd IEEE Electronic Components and Technology Conference, ECTC 2023
Country/TerritoryUnited States
CityOrlando
Period30/05/232/06/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • FOPLP
  • Genetic algorithms
  • Orthogonal experimental design
  • Reliability optimization
  • SiC MOSFET

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