INIS
design
100%
levels
100%
mosfet
100%
fans
100%
optimization
100%
packaging
100%
silicon carbides
100%
algorithms
100%
panels
100%
thickness
42%
lifetime
42%
reliability
28%
comparative evaluations
28%
fatigue
28%
increasing
14%
operation
14%
semiconductor devices
14%
reduction
14%
high temperature
14%
losses
14%
layers
14%
inductance
14%
genetic algorithms
14%
thermal cycling
14%
accuracy
14%
devices
14%
performance
14%
strains
14%
dies
14%
Engineering
Multiobjective Optimization
100%
Fan
100%
Algorithm
100%
Design
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Thickness
42%
Level Packaging
42%
Optimization
28%
Reliability
28%
Fatigue Lifetime
28%
Multiobjective Optimization Method
14%
High Temperature Operations
14%
Design of Experiments
14%
Models
14%
Semiconductor Device
14%
Genetic Algorithm
14%
Significant Influence
14%
Thermal Strain
14%
Predicted Lifetime
14%
Switching Loss
14%
Performance Improvement
14%
Thermal Resistance
14%
Design Method
14%
Cycles
14%
Switching Frequency
14%
Accuracy
14%
Reduction
14%
Baseplate
14%
Keyphrases
Solder Thickness
33%
Strain Resistance
16%
L(R)
16%
Coffin-Manson Model
16%
Fan-out Panel-level Packaging (FOPLP)
16%
Orthogonal Experimental Design
16%
Optimization Accuracy
16%