The power electronics circuits are seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. The overview of power semiconductors switches as an effects of temperature are shown in this paper. In this paper the combined modeling and simulation of electrical and thermal behavior of semiconductors is discussed. The models for the semiconductors, being the MOSFET, IGBT and DIODE are briefly introduced and their most important parameters are highlighted. The thermal models for all semiconductors are discussed and how they are connected to the semiconductors. A series of measurements are shown for the MOSFET, IGBT and DIODE and these results are compared with simulations.
|Conference||EPE-PEMC 2010, IEEE 14th International Power Electronics and Motion Control Conference, Ohrid, Macedonia|
|Period||6/09/10 → 8/09/10|
- conference contrib. refereed
- Conf.proc. > 3 pag