Thermal models for semiconductors

PJ van Duijsen, P Bauer, J Leuchter

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

    4 Citations (Scopus)

    Abstract

    The power electronics circuits are seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. The overview of power semiconductors switches as an effects of temperature are shown in this paper. In this paper the combined modeling and simulation of electrical and thermal behavior of semiconductors is discussed. The models for the semiconductors, being the MOSFET, IGBT and DIODE are briefly introduced and their most important parameters are highlighted. The thermal models for all semiconductors are discussed and how they are connected to the semiconductors. A series of measurements are shown for the MOSFET, IGBT and DIODE and these results are compared with simulations.
    Original languageEnglish
    Title of host publication2010 14th International Power Electronics and Motion Control Conference
    EditorsS Mircevski, D Boroyevich
    Place of PublicationOhrid, Macedonia
    PublisherIEEE Society
    Pages23-28
    Number of pages6
    ISBN (Print)978-1-4244-7856-9
    DOIs
    Publication statusPublished - 2010
    EventEPE-PEMC 2010, IEEE 14th International Power Electronics and Motion Control Conference, Ohrid, Macedonia - Ohrid, Macedonia
    Duration: 6 Sep 20108 Sep 2010

    Publication series

    Name
    PublisherIEEE

    Conference

    ConferenceEPE-PEMC 2010, IEEE 14th International Power Electronics and Motion Control Conference, Ohrid, Macedonia
    Period6/09/108/09/10

    Keywords

    • conference contrib. refereed
    • Conf.proc. > 3 pag

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